IXBH9N140G Description
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET patible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.9 V typ. 70 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Preliminary Data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting...
IXBH9N140G Key Features
- High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
- MOS Gate turn-on
- drive simplicity
- MOSFET patible for 10V turn on gate voltage
- Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
- International standard package JEDEC TO-247 AD