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High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode MOSFET compatible
IXBH 9N140G IXBH 9N160G
VCES IC25 VCE(sat) tfi
TO-247 AD
= = = =
1400/1600 V 9A 4.9 V typ. 70 ns
C G
G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector
C (TAB)
Preliminary Data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms VGE = 10 V, TVJ = 125°C, RG = 27 Ω VCE = 0.8•VCES Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 9N140G 9N160G 1400 1400 1600 1600 ±20 ±30 9 5 10 ICM = 12 100 -55 ... +150 150 -55 ...
IXBH9N140G Datasheet
