IXBH9N160G Datasheet Monolithic Bipolar MOS Transistor

Manufacturer: IXYS (now Littelfuse)

IXBH9N160G monolithic bipolar mos transistor by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXBH9N160G
Manufacturer	IXYS (now Littelfuse)
File Size	177.33 KB
Description	Monolithic Bipolar MOS Transistor
Download	IXBH9N160G Download (PDF)

Overview

High Voltage BiMOSFETTM IXBH9N160G Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET Transistor VCES = 1600V IC25 = 9A VCE(sat)  7.0V tfi(typ) = 70ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 90°C = 25°C, 1ms CVlGaEm=p1e0dVIn, dTuVJc=tiv1e2L5o°Cad, RG = 27 TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1600 1600 V V ±20 V ±30 V 9A 5A 10 A ICM = 12 1280 A V 100 W -55 ...

+150 150 -55 ...

+150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in.

Key Features

High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON.
MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage.
Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Characteristics.
International Standard Package - Reverse Conducting Capability Advantages.
Low Gate Drive Requirement.
High Power Density.

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