IXBH9N160G Description
+150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 1600 V 3.5 5.5 V 100 A 100 A 500 nA 4.9 7.0 V 5.6 V G CE G = Gate E = Emitter Tab C = Collector Tab = Collector.
IXBH9N160G Key Features
- High Voltage Package
- Replaces High Voltage Darlingtons and Series Connected MOSFETs
- Lower Effective RDSON
- MOS Gate turn-on
- Drive Simplicity
- MOSFET patible for 10V turn on Gate Voltage
- Monolithic construction
- High Blocking Voltage Capability
- Very Fast turn-off Characteristics
- International Standard Package