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IXBH9N160G - Monolithic Bipolar MOS Transistor

Datasheet Summary

Features

  • High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON.
  • MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage.
  • Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Characteristics.
  • International Standard Package - Reverse Conducting Capability Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Datasheet Details

Part number IXBH9N160G
Manufacturer IXYS Corporation
File Size 177.33 KB
Description Monolithic Bipolar MOS Transistor
Datasheet download datasheet IXBH9N160G Datasheet
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Full PDF Text Transcription

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High Voltage BiMOSFETTM IXBH9N160G Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET Transistor VCES = 1600V IC25 = 9A VCE(sat)  7.0V tfi(typ) = 70ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 90°C = 25°C, 1ms CVlGaEm=p1e0dVIn, dTuVJc=tiv1e2L5o°Cad, RG = 27 TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1600 1600 V V ±20 V ±30 V 9A 5A 10 A ICM = 12 1280 A V 100 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in.
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