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IXBH9N160G - Monolithic Bipolar MOS Transistor

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IXYS Corporation

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IXBH9N160G Monolithic Bipolar MOS Transistor by IXYS Corporation - Datasheet Preview — Datasheet preview – IXBH9N160G

Datasheet Details

Part number	IXBH9N160G
Manufacturer	IXYS Corporation
File Size	177.33 KB
Description	Monolithic Bipolar MOS Transistor
Datasheet	IXBH9N160G Datasheet
Additional preview pages of the IXBH9N160G datasheet.

Product details

Features

High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON.
MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage.
Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Characteristics.
International Standard Package - Reverse Conducting Capability Advantages.
Low Gate Drive Requirement.
High Power Density.

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Published: Apr 5, 2005 |