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Preliminary Technical Information
PolarVHVTM HiPerFET IXFB30N120P Power MOSFET
N-Channel Enhancement Mode
VDSS = 1200 V ID25 = 30 A RDS(on) ≤ 350 mΩ ≤ 300 ns trr
Symbol VDSS VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1 Ω TC = 25°C
Maximum Ratings 1200 ±30 ±40 30 75 10 60 3 15 1250 -55 ... +150 150 -55 ... +150 V V V A A A mJ J V/ns
PLUS264TM (IXFB)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features W °C °C °C °C °C N/lb g
z z
z
Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
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IXFB30N120P Datasheet
