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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH14N80 IXFH15N80
ID25
RDS(on) 0.70 W 0.60 W
800 V 14 A 800 V 15 A trr £ 250 ns
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 14N80 15N80 14N80 15N80 14N80 15N80 14 15 56 60 14 15 30 5 V V V V A A A A A A mJ V/ns
TO-247 AD
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features 300 -55 ... +150 150 -55 ...
IXFH14N80 Datasheet
