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IXFH14N80P - PolarHV HiPerFET Power MOSFET

Key Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 720 mΩ Easy to mount Space savings High power density DS99593E(07/06) www. DataSheet4U. net © 2006 IXYS All rights reserved IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS VDSS ID25 RDS(on) trr = 800 V = 14 A ≤ 720 mΩ ≤ 250 ms TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 14 40 7 30 500 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C PLUS220 (IXFV) G D (TAB) D (TAB) TO-3P (IXFQ) S TO-268 (IXFT) G S D (TAB) G D (TAB) 1.6 mm (0.062 in.