IXFH16N120P
IXFH16N120P is Power MOSFET manufactured by IXYS.
Polar TM Hi Per FETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFT16N120P IXFH16N120P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
± 30
± 40
800 m J
V/ns
-55 ... +150
°C
°C
-55 ... +150
°C
°C
°C
1.13 / 10
4 6
Nm/lb.in. g g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise...
