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IXFH16N80P - Power MOSFET

Key Features

  • z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % www. DataSheet4U. net © 2006 IXYS All rights reserved DS99599E(07/06) IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS VDSS = 800 V ID25 = 16 A RDS(on) ≤ 600 mΩ ≤ 250 ns trr TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 16 40 8 30 1.0 10 V V V V A A A mJ J V/ns G S G D S TO-268 (IXFT) D (TAB) PLUS220 (IXFV) PD TJ TJM Tstg TL TSOLD Md FC Weight 460 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C G D S D (TAB) PLUS220SMD (IXFV...S) 1.6 mm (0.062 in.