IXFH60N25Q Description
+150 300 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) TO-264 AA (IXFK) G D S D (TAB) 1.13/10 Nm/lb.in. 6 10 4 g g g G = Gate S = Source TAB = Drain.
IXFH60N25Q Key Features
- Low gate charge
- International standard packages
- Epoxy meet UL 94 V-0, flammability classification
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Avalanche energy and current rated
- Fast intrinsic Rectifier Advantages
- Easy to mount
- Space savings
- High power density