IXFH60N25Q Datasheet | IXYS

Advanced Technical Information Hi Per FETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-264 TO-247 TO-264 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q VDSS ID25 RDS(on) trr = 250 V = 60 A = 47 m W £ 250 ns Maximum Ratings 250 250 ±20 ±30 60 240 60 45 1.5 5 360 -55 ... +150 150 -55 ... +150 300 V V V V A A A m J J V/ns W °C °C °C °C TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) (TAB) TO-264 AA (IXFK) D (TAB) 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 10 4 g g g G = Gate S = Source TAB = Drain Features - Low gate charge - International standard packages - Epoxy meet UL 94 V-0, flammability classification - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Avalanche energy and current rated - Fast intrinsic Rectifier Advantages - Easy to mount - Space savings - High power...