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IXFH60N25Q - Power MOSFET

Key Features

  • Low gate charge.
  • International standard packages.
  • Epoxy meet UL 94 V-0, flammability classification.
  • Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-264 TO-247 TO-264 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q VDSS ID25 RDS(on) trr = 250 V = 60 A = 47 m W £ 250 ns Maximum Ratings 250 250 ±20 ±30 60 240 60 45 1.5 5 360 -55 ... +150 150 -55 ...