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IXFH66N20Q - Power MOSFET

Key Features

  • z z z 1.13/10 Nm/lb. in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.0 4.0 ±100 25 1 40 V V nA µA mA mΩ z z z IXYS advanced low Qg process International standard packages Low gate charge and capacitance - easier to drive - faster switching Low RDS (on) Unclamped Inductive Switching (U.

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet IXFH 66N20Q IXFT 66N20Q VDSS ID25 RDS(on) = 200 V = 66 A = 40 mΩ trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ± 30 ± 40 66 264 66 40 1.5 20 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-268 (D3) (IXFT) Case Style G S (TAB) TO-247 AD (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.