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HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg
Preliminary data sheet
IXFH 66N20Q IXFT 66N20Q
VDSS ID25
RDS(on)
= 200 V = 66 A = 40 mΩ
trr ≤ 200 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 200 200 ± 30 ± 40 66 264 66 40 1.5 20 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C
TO-268 (D3) (IXFT) Case Style
G S
(TAB)
TO-247 AD
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.
IXFH66N20Q Datasheet
