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IXFH60N50P3 - Polar3 HiperFET Power MOSFET

This page provides the datasheet information for the IXFH60N50P3, a member of the IXFT60N50P3 Polar3 HiperFET Power MOSFET family.

Features

  • z z z z G D S D (Tab) TO-247 (IXFH) G D S D (Tab) D = Drain Tab = Drain G = Gate S = Source 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247 300 260 1.13 / 10 4.0 5.5 6.0 Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±30V, VDS = 0.

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Datasheet Details

Part number IXFH60N50P3
Manufacturer IXYS Corporation
File Size 141.44 KB
Description Polar3 HiperFET Power MOSFET
Datasheet download datasheet IXFH60N50P3 Datasheet
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Full PDF Text Transcription

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Advance Technical Information Polar3TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT60N50P3 IXFQ60N50P3 IXFH60N50P3 VDSS ID25 RDS(on) = 500V = 60A ≤ 100mΩ TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 60 150 30 1 35 1040 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.
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