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HiPerFETTM Power MOSFETs
Single MOSFET Die
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
IXFK 180N10 IXFX 180N10
VDSS ID25
RDS(on)
= 100 V = 180 A = 8 mW
trr £ 250 ns
Maximum Ratings 100 100 ±20 ±30 180 76 720 180 60 3 5 560 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in.
IXFK180N10 Datasheet
