IXFK27N80 Datasheet | IXYS

.. Not for New Designs VDSS ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 0.35 0.30 0.35 Ω Ω Ω Ω Hi Per FETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK IXFK IXFN IXFN 27N80 25N80 27N80 25N80 800 800 800 800 TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 m A t = 1 min t=1s 300 0.9/6 10 TC= 25°C IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings IXFK IXFN 800 800 ± 20 ± 30 27N80 27 25N80 25 27N80 108 25N80 100 27N80 14 25N80 13 30 5 500 800 800 ± 20 ± 30 27 25 108 100 14 13 30 5 520 150 -55 ... +150 2500 3000 V V V V A A A A A A m J V/ns W °C °C °C °C V~ V~ Features - - - - - - (TAB) mini BLOC, SOT-227 B (IXFN) E153432 G S S S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at mini BLOC can be used as Main or Kelvin Source -55 ... +150 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 0.096 2 -0.214 ±200 TJ = 25°C TJ = 125°C 25N80 27N80 500 2 0.35 0.30 4.5 V %/K V %/K n A µA m A Ω Ω - - International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification mini BLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 m A VDSS temperature coefficient VDS = VGS, ID = 8 m A VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8 - VDSS VGS = 0 V VGS = 10 V, ID = 0.5 - ID25 Pulse test, t ≤ 300 µs, duty cycle d...