IXFK27N80Q Datasheet | IXYS

Hi Per FETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS ID25 RDS(on) = 800 V = 27 A = 300 m W trr £ 250 ns PLUS 247TM (IXFX) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High d V/dt, Low trr (TAB) D Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 27 108 27 60 2.5 5 500 -55 ... +150 150 -55 ... +150 V V V V A A A m J J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g TO-264 AA (IXFK) (TAB) ISOPLUS 247TM (IXFR) E153432 Isolated back surface- G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247/ISOPLUS 247 TO-264 0.4/6 Features - IXYS advanced low Qg process - Low gate charge and capacitances - easier to drive - faster switching - International standard packages - Low RDS (on) - Rated for unclamped Inductive load switching (UIS) rated - Molding epoxies meet UL 94 V-0 flammability classification Applications - DC-DC converters - Battery...