IXFL60N60 - MOSFET

Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

IXYS Corporation

Datasheet Details

Part number	IXFL60N60
Manufacturer	IXYS
File Size	522.74 KB
Description	MOSFET
Datasheet	IXFL60N60 Datasheet
Additional preview pages of the IXFL60N60 datasheet.

📁 Similar Datasheet

IXFL38N100Q2 - Power MOSFET (IXYS)
IXFL44N100P - Power MOSFET (Littelfuse)
IXF18102 - 10Gbps Physical Layer Device (Intel Corporation)
IXF18104 - 10 Gigabit Lan PHY (Intel Corporation)
IXFA102N15T - N-Channel MOSFET (INCHANGE)
IXFA110N15T2 - N-Channel MOSFET (INCHANGE)
IXFA12N65X2 - Power MOSFET (IXYS)
IXFA12N65X2 - N-Channel MOSFET (INCHANGE)
IXFA130N10T - N-Channel MOSFET (INCHANGE)
IXFA130N10T2 - N-Channel MOSFET (INCHANGE)

Other Datasheets by IXYS Corporation

IXFL60N80P - PolarHV HiPerFET Power MOSFET ISOPLUS264
IXFL100N50P - PolarHV HiPerFET Power MOSFET
IXFL30N120P - Polar HiPerFET Power MOSFET
IXFL32N120P - Polar HiPerFET Power MOSFET
IXFL34N100 - HiPerFET Power MOSFET ISOPLUS264
IXFL36N110P - Polar Power MOSFET HiPerFET
IXFL38N100P - Polar Power MOSFET HiPerFET
IXFL39N90 - HiPerFET Power MOSFETs ISOPLUS264

Full PDF Text Transcription

Click to expand full text

HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 60N60 (Electrically Isolated Backside) Single Die MOSFET VDSS ID25 RDS(on) = 600 V = 60 A = 80 mΩ Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD FC TJ TJM Tstg VISOL Md Weight Symbol VDSS VGH(th) IGSS IDSS RDS(on) Test Conditions TJ= 25°C to 150°C TJ= 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC= 25°C Mouting Force Maximum Ratings 600 V 600 V ±20 V ±30 V 60 A 240 A 60 A 64 mJ 4J 5 V/ns 700 30...150/7...33 -55 ... +150 150 -55 ...

Published: Aug 31, 2015 |