IXFL60N60 Datasheet | IXYS

Hi Per FETTM Power MOSFETs ISOPLUS264TM IXFL 60N60 (Electrically Isolated Backside) Single Die MOSFET VDSS ID25 RDS(on) = 600 V = 60 A = 80 mΩ Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt FC TJ TJM Tstg VISOL Md Weight Symbol VDSS VGH(th) IGSS IDSS RDS(on) Test Conditions TJ= 25°C to 150°C TJ= 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC= 25°C, Chip capability TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC= 25°C Mouting Force Maximum Ratings 600 V 600 V ±20 V ±30 V 60 A 240 A 60 A 64 m J 4J 5 V/ns 30...150/7...33 -55 ... +150 150 -55 ... +150 N/lb °C °C °C 50/60 Hz, RMS t = 1...