IXFL60N80P Datasheet PolarHV HiPerFET Power MOSFET ISOPLUS264

Manufacturer: IXYS (now Littelfuse)

IXFL60N80P polarhv hiperfet power mosfet isoplus264 by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFL60N80P
Manufacturer	IXYS (now Littelfuse)
File Size	218.14 KB
Description	PolarHV HiPerFET Power MOSFET ISOPLUS264
Download	IXFL60N80P Download (PDF)

Overview

PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 60N80P VDSS ID25 = 800 V = 40 A RDS(on) ≤ 150 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω TC = 25° C Maximum Ratings 800 800 ±30 ±40 40 150 30 100 5 20 625 -55 ...

+150 150 -55 ...

Key Features

l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS IISOL ≤1 mA Mounting force t = 1 min t=1s 300 2500 3000 28..150 / 6.4..30 5 l VISOL FC Weight V~ V~ N/lb g l l Advantages l l.

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