IXFN360N10T Description
+175 V V V V A A A A J W V/ns °C °C °C °C °C V~ V~ Nm/lb.in. g S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
- Part: IXFN360N10T
- Manufacturer: IXYS
- Size: 195.37 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFN360N15T2 | GigaMOS TrenchT2 HiperFET Power MOSFET |
| IXFN36N110P | Polar Power MOSFET HiPerFET |
| IXFN300N10P | Power MOSFET |
| IXFN30N110P | Polar Power MOSFET HiPerFET |
| IXFN30N120P | Polar Power MOSFET HiPerFET |