IXFN360N15T2 Description
+175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
IXFN360N15T2 is GigaMOS TrenchT2 HiperFET Power MOSFET manufactured by IXYS.
| Part Number | Description |
|---|---|
| IXFN360N10T | GigaMOS Trench HiperFET Power MOSFET |
| IXFN36N110P | Polar Power MOSFET HiPerFET |
| IXFN300N10P | Power MOSFET |
| IXFN30N110P | Polar Power MOSFET HiPerFET |
| IXFN30N120P | Polar Power MOSFET HiPerFET |
+175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.