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HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM
IXFR 24N50Q (Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on) 0.20 Ω 0.23 Ω
500 V 24 A 500 V 22 A trr ≤ 250 ns
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Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 500 500 ± 20 ± 30 26N50Q 24N50Q 26N50Q 24N50Q 26N50Q 24N50Q 24 22 104 96 26 24 30 1.5 5 250 -55 ... +150 150 -55 ...
IXFR26N50Q Datasheet
