IXFR20N120P Description
+150 V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb. g ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source D = Drain.
IXFR20N120P Key Features
- Silicon chip on Direct-Copper-Bond
- substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell