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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC
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IXFR20N120P
VDSS ID25
RDS(on) trr
= = ≤ ≤
1200V 13A 630mΩ 300ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1200 1200 ± 30 ± 40 13 50 10 1 15 290 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb.
IXFR20N120P Datasheet
