IXFR20N80P - PolarHV HiPerFET Power MOSFET

Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

IXYS Corporation

Datasheet Details

Part number	IXFR20N80P
Manufacturer	IXYS Corporation
File Size	152.89 KB
Description	PolarHV HiPerFET Power MOSFET
Datasheet	IXFR20N80P Datasheet
Additional preview pages of the IXFR20N80P datasheet.

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Full PDF Text Transcription

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PolarHVTM HiPerFET Power MOSFET IXFC 20N80P IXFR 20N80P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL www.DataSheet4U.net VDSS = 800 V ID25 = 10 A RDS(on) ≤ 500 mΩ ≤ 250 ns trr Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 3 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 11 60 10 30 1.0 10 166 -55 ... +150 150 -55 ...

Published: May 23, 2011 |