IXFR200N10P Description
Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated .. Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C;.
IXFR200N10P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<30pF)