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IXFR200N10P - PolarTM HiPerFET Power MOSFET

Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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Datasheet preview – IXFR200N10P

Datasheet Details

Part number IXFR200N10P
Manufacturer IXYS Corporation
File Size 593.20 KB
Description PolarTM HiPerFET Power MOSFET
Datasheet download datasheet IXFR200N10P Datasheet
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Advanced Technical Information PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXFR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ Nm/lb g VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight ISOPLUS247 (IXFR) E153432 G D S ISOLATED TAB D = Drain TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 133 75 400 60 100 4 10 350 -55 ... +175 175 -55 ...
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