IXFR21N100Q Description
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet .. 1000 2.5 V 4.5 V ±100 nA TJ = 125°C 100 mA 2 mA 0.5.
IXFR21N100Q Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive
- faster switching
- Low drain to tab capacitance(<30pF)
- Low RDS (on) HDMOSTM process