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IXFR24N100 - HiPerFETTM Power MOSFETs

Features

  • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
  • Low drain to tab capacitance(.

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Datasheet preview – IXFR24N100

Datasheet Details

Part number IXFR24N100
Manufacturer IXYS Corporation
File Size 65.76 KB
Description HiPerFETTM Power MOSFETs
Datasheet download datasheet IXFR24N100 Datasheet
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Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 24N100 VDSS = 1000 V ISOPLUS247TM 22 A ID25 = (Electrically Isolated Back Surface) Single MOSFET Die RDS(on) = 0.39 W trr £ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 22 96 24 60 3 5 400 -55 ... +150 150 -55 ...
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