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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC
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IXFR20N100P
VDSS ID25
RDS(on) trr
= 1000V = 11A ≤ 640mΩ ≤ 300ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ± 30 ± 40 11 50 10 500 15 230 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C V~ N/lb.
IXFR20N100P Datasheet
