Overview: HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM
IXFR 24N50Q (Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 Ω 0.23 Ω 500 V 24 A 500 V 22 A trr ≤ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 26N50Q 24N50Q 26N50Q 24N50Q 26N50Q 24N50Q 24 22 104 96 26 24 30 1.5 5 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM E153432 G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending 1.6 mm (0.062 in.
