IXFR26N60Q Description
HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances VDSS = 600 V ID25 = 23 A RDS(on) = 250 mW trr £ 250 ns .. Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.
IXFR26N60Q Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive
- faster switching
- Low drain to tab capacitance(<30pF)
- Low RDS (on) HDMOSTM process