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HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances
VDSS = 600 V ID25 = 23 A RDS(on) = 250 mW trr £ 250 ns
www.DataSheet4U.com
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 600 600 ±20 ±30 23 92 26 45 1.5 5 310 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E153432
G = Gate S = Source * Patent pending
D = Drain
1.6 mm (0.063 in.
IXFR26N60Q Datasheet
