IXFR4N100Q Datasheet HiPerFET Power MOSFETs

Manufacturer: IXYS (now Littelfuse)

IXFR4N100Q hiperfet power mosfets by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXFR4N100Q
Manufacturer	IXYS (now Littelfuse)
File Size	107.29 KB
Description	HiPerFET Power MOSFETs
Datasheet	IXFR4N100Q Datasheet

Overview

www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFR 4N100Q VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns Maximum Ratings 1000 1000 ± 20 ± 30 3.5 16 4 20 700 5 80 -55 ...

+150 150 -55 ...

Key Features

z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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