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HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
IXFR 4N100Q
VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns
Maximum Ratings 1000 1000 ± 20 ± 30 3.5 16 4 20 700 5 80 -55 ... +150 150 -55 ...
IXFR4N100Q Datasheet
