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HiPerFASTTM IGBT with Diode
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V CES
I C25
V CE(sat) 2.3 V 2.5 V
t fi 100ns 120ns
IXGK 50N50BU1 IXGK 50N60BU1
500 V 75 A 600 V 75 A
Combi Pack
Preliminary data
Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 m H TC = 25°C
Maximum Ratings 50N50 50N60 500 500 ±20 ±30 75 50 200 600 600 ±20 ±30 75 50 200 V V V V A A A A
TO-264 AA
VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
G
C
E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
ICM = 100 @ 0.8 V CES 300 300
Features W °C °C °C Nm/lb.in. g °C
q q q
-55 ... +150 150 -55 ... +150 Mounting torque (M4) 0.
IXGK50N50BU1 Datasheet
