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IXGK50N60A2D1 - IGBT

Key Features

  • Low on-state voltage IGBT and anti-parallel diode in one package.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Data IGBT with Diode IXGK 50N60A2D1 IXGX 50N60A2D1 V I CES VC25 CE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.