IXGK50N60A2D1 Description
+150 °C °C °C 1.13/10 Nm/lb.in.
IXGK50N60A2D1 Key Features
- Low on-state voltage IGBT and
- High current handling capability
- MOS Gate turn-on for drive simplicity
- Part: IXGK50N60A2D1
- Manufacturer: IXYS
- Size: 116.31 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXGK50N60AU1 | HiPerFAST IGBT |
| IXGK50N60B | HiPerFAST IGBT |
| IXGK50N60BU1 | HiPerFAST IGBT |
| IXGK50N60C2D1 | High Speed IGBT |
| IXGK50N50BU1 | HiPerFAST IGBT |