Download the IXGK50N60BU1 datasheet PDF.
This datasheet also covers the IXGK50N50BU1 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.
Key Features
W °C °C °C Nm/lb. in. g °C
q q q
-55 +150 150 -55 +150 Mounting torque (M4) 0.9/6 10 300
q
q q
Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s
International standard package JEDEC TO-264 AA High frequency IGBT and antiparallel FRED in one package 2nd generation.
Note: The manufacturer provides a single datasheet file (IXGK50N50BU1_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IXGK50N60BU1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXGK50N60BU1. For precise diagrams, and layout, please refer to the original PDF.
HiPerFASTTM IGBT with Diode www.datasheet4u.com V CES I C25 V CE(sat) 2.3 V 2.5 V t fi 100ns 120ns IXGK 50N50BU1 IXGK 50N60BU1 500 V 75 A 600 V 75 A Combi Pack Preliminar...
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XGK 50N50BU1 IXGK 50N60BU1 500 V 75 A 600 V 75 A Combi Pack Preliminary data Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 m H TC = 25°C Maximum Ratings 50N50 50N60 500 500 ±20 ±30 75 50 200 600 600 ±20 ±30 75 50 200 V V V V A A A A TO-264 AA VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight G C E G = Gate, E = Emitter, C = Collector, TAB = Collector ICM = 100 @ 0.8 V CES 300 300 Features W °C °C °C Nm/lb.in. g °C q q q -55 ... +150 150 -55 ... +150 Moun
IXGK50N60BU1 Datasheet
