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IXGK50N60C2D1 - High Speed IGBT

Download the IXGK50N60C2D1 datasheet PDF. This datasheet also covers the IXGX50N60C2D1 variant, as both devices belong to the same high speed igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Very high frequency IGBT and anti-parallel FRED in one package.
  • Square RBSOA.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGX50N60C2D1_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXGK50N60C2D1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGK50N60C2D1. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com HiPerFASTTM IGBT with Diode IXGK 50N60C2D1 IXGX 50N60C2D1 C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi(typ) Preliminary Data Sheet = 600 V = 75 A ...

View more extracted text
BTs VCES IC25 VCE(sat) tfi(typ) Preliminary Data Sheet = 600 V = 75 A = 2.5 V = 48 ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient Maximum Ratings 600 V 600 V ±20 V ±30 V TC = 25°C (limited by leads) TC = 110°C TC = 110°C TC = 25°C, 1 ms 75 A 50 A 48 A 300 A VGE = 15 V, TVJ = 125°C, RG = 10 Ω DataSheet4UI.CcMo=m100 A Clamped inductive load @ VCE ≤ 600 V TC = 25°C 480 W -55 ... +150 °C 150 °C -55 ... +150 °C Mounting torque, TO-264 1.13/10 Nm/lb.in. TO-264 PLUS247 10 g 6 g Maximum lead temperature

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