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IXGK50N90B2D1 - HiPerFAST IGBT

Download the IXGK50N90B2D1 datasheet PDF. This datasheet also covers the IXGH50N90B2D1 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH50N90B2D1_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXGK50N90B2D1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXGK50N90B2D1. For precise diagrams, and layout, please refer to the original PDF.

w w w . D a t a S h e e t 4 U . n e t HiPerFASTTM IGBT with Fast Diode IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 B2-Class High Speed IGBT with Fast Diode Preliminary D...

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IXGX 50N90B2D1 B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md FC Weight Mounting torque (TO-247, TO-264) Mounting force (PLUS247) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 900 900 ± 20 ± 30 75 50 200 ICM = 100 400 -55 ... +150 150 -55 ... +150 300 V V V V A A A A VCES

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