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IXTH280N055T - Power MOSFET

Key Features

  • D = Drain TAB = Drain International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH280N055T IXTQ280N055T VDSS = ID25 = RDS(on) ≤ 55V 280A 3.2mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.