Download the IXTQ180N055T datasheet PDF.
This datasheet also covers the IXTP180N055T variant, as both devices belong to the same (ixtp180n055t / ixta180n055t / ixtq180n055t) trench gate power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C
Characteristic Values Min. Typ. Max. 55 2.0 4.0 ±200 1 250 3.3 4.0 V
Advantages
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V nA µA µA mΩ
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Easy to mount Space savings High power density
VGS = 10 V, ID =.
Note: The manufacturer provides a single datasheet file (IXTP180N055T_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IXTQ180N055T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ180N055T. For precise diagrams, and layout, please refer to the original PDF.
Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3...
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180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 55 55 ± 20 V V V TO-220 (IXTP) 180 75 600 75 1.0 3 360 -55 ... +175 175 -55 ... +150 A A A A G (TAB) G D S (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C J V/ns W °C °C °C °C °C G = Gate S = Source D S TO-263 (IXTA) G S (TAB) D = Drain TAB = Drain 1.6 mm (0.062 in.
IXTQ180N055T Datasheet
