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PolarTM Power MOSFET
IXTT69N30P IXTQ69N30P
VDSS = 300V
ID25 = 69A ≤ RDS(on) 49mΩ
N-Channel Enhancement Mode Avalanche Rated
TO-268 (IXTT)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS < IDM, VDD < VDSS, TJ < 150°C TC = 25°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P) TO-268 TO-3P
Maximum Ratings
300
V
300
V
± 20
V
± 30
V
69
A
200
A
69
A
1.5
J
15
V/ns
500
W
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
4.0
g
5.
IXTQ69N30P Datasheet
