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IXTQ69N30P - Power MOSFET

Download the IXTQ69N30P datasheet PDF. This datasheet also covers the IXTT69N30P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.

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Note: The manufacturer provides a single datasheet file (IXTT69N30P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTQ69N30P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ69N30P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET IXTT69N30P IXTQ69N30P VDSS = 300V ID25 = 69A ≤ RDS(on) 49mΩ N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 ...

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nt Mode Avalanche Rated TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS < IDM, VDD < VDSS, TJ < 150°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3P) TO-268 TO-3P Maximum Ratings 300 V 300 V ± 20 V ± 30 V 69 A 200 A 69 A 1.5 J 15 V/ns 500 W -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4.0 g 5.

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