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IXTT82N25P - Power MOSFET

Key Features

  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Full PDF Text Transcription for IXTT82N25P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTT82N25P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET IXTT82N25P IXTQ82N25P IXTK82N25P VDSS = ID25 = RDS(on) 250V 82A 38m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRM...

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Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P&TO-264) TO-268 TO-3P TO-264 Maximum Ratings 250 250 V V 20 V 30 V 82 A 75 A 200 A 500 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.in 4.0 g 5.5 g 10.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic

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