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IXTT88N15 - High Current Power MOSFET

Download the IXTT88N15 datasheet PDF. This datasheet also covers the IXTH88N15 variant, as both devices belong to the same high current power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 AD TO-268 300 1.13/10 Nm/lb. in. 6 4 g g z International standard packages Low RDS (on).

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Note: The manufacturer provides a single datasheet file (IXTH88N15_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTT88N15 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTT88N15. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 88N15 IXTT 88N15 V DSS I D25 RDS(on) = = = 150 V 88 A 22 mΩ Sy...

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de IXTH 88N15 IXTT 88N15 V DSS I D25 RDS(on) = = = 150 V 88 A 22 mΩ Symbol V DSS V DGR VGS VGSM I D25 I DM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 88 352 88 50 1.5 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXTH) (TAB) TO-268 (IXTT) Case Style G G = Gate S = Source S D = Drain TAB = Drain (TAB) Features z z z

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