IXBH40N160 Overview
IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IC25 = 33 A VCES = 1600 V VCE(sat) = 6.2 V typ. tfi = 40 ns BVCES VGE(th) ICES IGES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient Maximum Ratings 1600 1600 V V ±20 V ±30 V TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Ω VCE = 0.8·VCES Clamped inductive load, L = 100 µH 33 20 40
IXBH40N160 Key Features
- International standard package JEDEC TO-247 AD
- High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
- Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
- MOS Gate turn-on
- drive simplicity
- Intrinsic diode