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IXBH 40N160
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode
IC25 = 33 A VCES = 1600 V VCE(sat) = 6.2 V typ. tfi = 40 ns
C TO-247 AD
G E
G
C E
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight
Symbol
BVCES VGE(th) ICES
IGES VCE(sat)
Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous Transient
Maximum Ratings
1600 1600
V V
±20 V ±30 V
TC = 25°C TC = 90°C TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 22 Ω VCE = 0.8·VCES Clamped inductive load, L = 100 µH
33 20 40
ICM = 40
A A A
A
TC = 25°C 1.6 mm (0.063 in) from case for 10 s
350
-55 ... +150 150
-55 ... +150 300
W
°C °C °C °C
Mounting torque
1.15/10 Nm/lb.in.
IXBH40N160 Datasheet
