Click to expand full text
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFH 17N80Q IXFT 17N80Q
VDSS ID25 RDS(on)
= 800 V = 17 A = 0.60 Ω
trr ≤ 250 ns
Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 800 800 ± 20 ± 30 17 68 17 30 1.0 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C g g
TO-268 (D3) (IXFT) Case Style
G S
(TAB)
TO-247 AD (IXFH)
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.062 in.
IXFH17N80Q Datasheet
