IXFK72N20 Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 300 0.9/6 10 V V V V A A A A A mJ V/ns W °C °C °C °C Nm/lb.in. g TO-264 AA G D S (TAB) G = Gate S = Source D = Drain TAB =...
IXFK72N20 Key Features
- International standard packages
- Molding epoxies meet UL 94 V-0 flammability classification
- Low RDS (on) HDMOSTM process
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic rectifier