IXFX80N50P Datasheet | IXYS

Advance Technical Information Polar HVTM Hi Per FET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK 80N50P IXFX 80N50P VDSS ID25 trr RDS(on) = 500 V = 80 A < 65 mΩ < 200 ns .. TO-264 AA (IXFK) Symbol VDSS VDGR VGSM VGSM ID25 IL IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force Mounting torque (TO-264) TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ± 40 ± 30 80 75 200 80 80 305 10 1040 -55 ... +150 150 -55 ... +150 300 260 20..120/4.5..25 V V V V A A A A m J J V/ns W °C °C °C °C °C N/lb D (TAB) PLUS247 (IXFX) D (TAB) G = Gate D = Drain S = Source Tab = Collector Features z z 1.13/10 Nm/lb.in. 10 6 g g z Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500 μA VDS = VGS, ID = 8 m A VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 200 25 1 65 V V n A μA m A mΩ International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density © 2005 IXYS All rights reserved DS99437(09/05) IXFK 80N50P IXFX 80N50P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 45 70 12.7 VGS = 0 V, VDS = 25 V, f = 1 MHz 1280 120 25 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 1 Ω (External) 27 70 16 197 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 64 S n F p F p F ns ns ns ns n C n C n C 0.12 K/W 0.15 K/W A A1 A2 b b1 b2 C D E e L L1 Q R Dim. Terminals: 1 - Gate 2 - Drain (Collector)...