IXFX80N50Q3 Datasheet | IXYS

Q3-Class Hiper FETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFK80N50Q3 IXFX80N50Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM EAS dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 30 40 TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 80 240 50 1250 -55 ... +150 150 -55 ... +150 V/ns W C C C Maximum Lead Temperature for Soldering °C 1.6 mm (0.062in.) from Case for 10s °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in N/lb TO-264...