IXSP20N60B2D1 - High Speed IGBT

Features

µs W °C °C °C g °C °C.
International standard package.
Guaranteed Short Circuit SOA capability.
Low VCE(sat) - for low on-state conduction losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Fast fall time for switching speeds up to 20 kHz.

IXSP20N60B2D1 High Speed IGBT by IXYS - Datasheet Preview — Datasheet preview – IXSP20N60B2D1

Datasheet Details

Part number	IXSP20N60B2D1
Manufacturer	IXYS (now Littelfuse)
File Size	597.21 KB
Description	High Speed IGBT
Datasheet	IXSP20N60B2D1 Datasheet
Additional preview pages of the IXSP20N60B2D1 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSP 20N60B2 IXSP 20N60B2D1 VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Symbol Test Conditions TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C Maximum Ratings 600 600 ± 20 ± 30 35 20 11 60 ICM = 32 @ 0.8 VCES 10 190 -55 ... +150 150 -55 ...

Published: Jun 20, 2010 |