IXSP24N60B Description
+150 2 300 W °C °C °C g °C TO-220 (IXSP) GC E C (TAB) G = Gate E = Emitter TAB = Collector.
IXSP24N60B Key Features
- for low on-state conduction losses z High current handling capability z MOS Gate turn-on
- drive simplicity z Fast Fall Time for switching speeds
- VCES V =0V