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IXSP24N60B - High Speed IGBT

Features

  • z International standard packages z Guaranteed Short Circuit SOA capability z Low VCE(sat) - for low on-state conduction losses z High current handling capability z MOS Gate turn-on - drive simplicity z Fast Fall Time for switching speeds up to 50 kHz Symbol BVCES VGE(th) ICES I GES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 250 µA, VGE = 0 V IC = 1.5 mA, VCE = VGE VCE = 0.8.
  • VCES V =0V GE V CE = 0 V, V GE = ±20.

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High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSP 24N60B VCES IC25 V CE(sat) = 600 V = 48 A = 2.5 V tfi typ = 170 ns Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC T J TJM Tstg Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms V= GE 15 V, T J = 125°C, R G = 33 Ω Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 600 ±20 ±30 48 24 96 I = 48 CM @ 0.8 VCES 10 V V V V A A A A µs 150 -55 ... +150 150 -55 ...
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