z International standard packages z Guaranteed Short Circuit SOA
capability z Low VCE(sat)
- for low on-state conduction losses z High current handling capability z MOS Gate turn-on
- drive simplicity z Fast Fall Time for switching speeds
up to 50 kHz
Symbol
BVCES VGE(th) ICES
I
GES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. IC = 250 µA, VGE = 0 V IC = 1.5 mA, VCE = VGE
VCE = 0.8.
Full PDF Text Transcription for IXSP24N60B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXSP24N60B. For precise diagrams, and layout, please refer to the original PDF.
High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSP 24N60B VCES IC25 V CE(sat) = 600 V = 48 A = 2.5 V tfi typ = 170 ns Symbol Test Conditions VCES VC...
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= 600 V = 48 A = 2.5 V tfi typ = 170 ns Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC T J TJM Tstg Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms V= GE 15 V, T J = 125°C, R G = 33 Ω Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 600 ±20 ±30 48 24 96 I = 48 CM @ 0.8 VCES 10 V V V V A A A A µs 150 -55 ... +150 150 -55 ...
IXSP24N60B Datasheet
