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IXSQ10N60B2D1 - High Speed IGBT with Diode

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IXYS

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IXSQ10N60B2D1 High Speed IGBT with Diode by IXYS - Datasheet Preview — Datasheet preview – IXSQ10N60B2D1

Datasheet Details

Part number	IXSQ10N60B2D1
Manufacturer	IXYS
File Size	631.02 KB
Description	High Speed IGBT with Diode
Datasheet	IXSQ10N60B2D1 Datasheet
Additional preview pages of the IXSQ10N60B2D1 datasheet.

Product details

Features

International standard package.
Guaranteed Short Circuit SOA capability.
Low VCE(sat) - for low on-state conduction losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Fast fall time for switching speeds up to 20 kHz.

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Published: Jun 19, 2010 |