IXTH12N120 Description
Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Ω Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EEAARS PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 °C °C °C 1.13/10 Nm/lb.in. 6g 300 °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain.