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Power MOSFET, Avalanche Rated High Voltage
Preliminary Data Sheet
IXTH 12N120
VDSS = 1200 V
ID (cont) = 12 A
RDS(on)=
1.4 Ω
Symbol Test Conditions
VDSS VDGR
VGS VGSM
ID25 IDM IAR
EEAARS
PD
TJ TJM Tstg
Md
Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TTCC
= 25°C = 25°C
TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1200 1200
V V
±30 V ±40 V
12 A 48 A 12 A
30 mJ 1.0 J
500 W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
IXTH12N120 Datasheet
