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IXTH32P20T - Power MOSFET

Download the IXTH32P20T datasheet PDF. This datasheet also covers the IXTA32P20T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density.

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Note: The manufacturer provides a single datasheet file (IXTA32P20T-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTH32P20T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTH32P20T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TO-263 AA (IXTA) TO-220AB ...

View more extracted text
IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤RDS(on) - 200V - 32A 130mΩ TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 - 200 + 15 + 25 V V V V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C - 32 - 96 - 32 1 300 -55 ... +150 150 -55 ... +150 A A A J W °C °C °C 1.6mm (0.062 in.) from Case for 10s Plastic body for 10s 300 °C 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6

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