IXTL2N450 - High Voltage Power MOSFET

Features

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface.
4000V~ RMS Electrical Isolation.
Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

Datasheet Details

Part number	IXTL2N450
Manufacturer	IXYS
File Size	151.80 KB
Description	High Voltage Power MOSFET
Datasheet	IXTL2N450 Datasheet
Additional preview pages of the IXTL2N450 datasheet.

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Full PDF Text Transcription

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High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTL2N450 VDSS ID25 RDS(on) = 4500V = 2A  20 ISOPLUS i5-PakTM Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 4500 4500 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C 2 8 220 - 55 ... +150 150 - 55 ... +150 A A W C C C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260 °C Mounting Force 20..120 / 4.5..27 N/lb. 50/60Hz, 1 Minute 4000 V~ 8g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.

Published: Jul 28, 2015 |