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IXTN30N100L - Power MOSFET

This page provides the datasheet information for the IXTN30N100L, a member of the IXTB30N100L Power MOSFET family.

Features

  • Designed for linear operation.
  • International standard packages.
  • Molding epoxies meet UL 94 V-0 flammability classification.
  • SOT-227B miniBLOC with aluminium nitride isolation Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 μA V = ± 30 V , V = 0 GS DC DS VDS = VDSS, VGS = 0 V TJ = 25°C TJ = 125°C VGS = 20 V, ID = 0.5.
  • ID2.

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Power MOSFETs with IXTB 30N100L Extended FBSOA IXTN 30N100L N-Channel Enhancement Mode Avalanche Rated VDSS = 1000 V ID25 = 30 A ≤RDS(on) 0.45 Ω Symbol VDSS VDGR V GS VGSM ID25 IDM IAR EAR EAS P D TJ TJM Tstg TL V ISOL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Maximum Ratings IXTB IXTN PLUS264 (IXTB) 1000 1000 V 1000 1000 V ± 30 ± 40 ± 30 ± 40 V V TC = 25°C TC = 25°C, Pulse width limited by T JM TC = 25°C TC = 25°C TC = 25°C T = 25°C C 30 30 70 70 30 30 80 80 2.0 2.0 800 800 -55 ... +150 150 -55 ... +150 AG A D S (TAB) A miniBLOC, SOT-227 B (IXTN) mJ E153432 S J DG W °C G °C S °C S D S 1.6 mm (0.
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