Datasheet Details
| Part number | IXTN32P60P |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 111.66 KB |
| Description | Power MOSFET |
| Download | IXTN32P60P Download (PDF) |
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| Part number | IXTN32P60P |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 111.66 KB |
| Description | Power MOSFET |
| Download | IXTN32P60P Download (PDF) |
|
|
|
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN32P60P VDSS ID25 = = ≤RDS(on) - 600V - 32A 350mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS t = 1 minute IISOL ≤ 1mA t = 1 second Mounting torque Terminal Connection torque Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 Maximum Ratings - 600 - 600 ±20 ±30 - 32 - 90 - 32 3.5 V V V V A A A J 10 890 -55 ...
+150 150 -55 ...
+150 300 260 2500 3000 1.5/13 1.3/11.5 30 V/ns W °C °C °C °C °C V~ V~ Nm/lb.in.
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